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| SI9424BDY New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 0.033 @ VGS = -2.5 V - 6.1 FEATURES ID (A) -7.1 rDS(on) (W) 0.025 @ VGS = -4.5 V D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS -1.7 2.0 1.3 -55 to 150 -5.6 -30 -1.0 1.25 0.8 W _C -4.5 A Symbol VDS VGS 10 secs Steady State -20 "9 Unit V - 7.1 -5.6 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72015 S-21785--Rev. A, 07-Oct-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 50 80 30 Maximum 62.5 100 40 Unit _C/W C/W 1 SI9424BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "9 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -7.1 A VGS = -2.5 V, ID = -6.6 A VDS = -10 V, ID = -7.7 A IS = -2.3 A, VGS = 0 V -30 0.014 0.019 25 -0.7 -1.2 0.025 0.033 -0.45 -0.85 "100 -1 -5 V nA mA m A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.3 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -6 V, VGS = -4.5 V, ID = -7.1 A 24 3.5 5.8 30 40 130 70 50 45 60 200 105 100 ns 40 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 4.5 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 18 12 1.5 V 12 TC = 125_C 25_C -55 _C 6 1V 0 0 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72015 S-21785--Rev. A, 07-Oct-02 SI9424BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 3600 Vishay Siliconix Capacitance C - Capacitance (pF) 0.04 3000 2400 Ciss 0.03 1800 0.02 VGS = 2.5 V 1200 Coss 600 Crss 0.01 VGS = 4.5 V 0.00 0 6 12 18 24 30 36 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 7.1 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7.1 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 10 15 20 25 30 1.2 2 1.0 1 0.8 0 0 5 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.08 ID = 7.1 A 0.06 I S - Source Current (A) 10 TJ = 150_C 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72015 S-21785--Rev. A, 07-Oct-02 www.vishay.com 3 SI9424BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 100 Single Pulse Power 0.4 80 VGS(th) Variance (V) 0.2 ID = 250 mA Power (W) 60 -0.0 40 -0.2 20 -0.4 -0.6 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 Time (sec) 1 10 100 TJ - Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 ms, 100 ms 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 0.1 1s 10 s TA = 25_C Single Pulse 100 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 1 Square Wave Pulse Duration (sec) 10- 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72015 S-21785--Rev. A, 07-Oct-02 SI9424BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72015 S-21785--Rev. A, 07-Oct-02 www.vishay.com 5 |
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